Characterization of Surface Metal Contamination on Silicon Wafers Using Surface Metal Extraction Inductively Coupled Plasma Mass Spectrometry (SME- ICP-MS)

Characterization of Trace Impurities in Silicon Wafers by High Sensitivity Reaction Cell ICP-MS Application Semiconductor Author Junichi Takahashi Kouichi Youno Agilent Technologies 9-1 Takakura-Cho, Hachioji-Shi Tokyo, 192-0033 Japan Abstract A newly designed, high-sensitivity reaction cell inductively coupled plasma mass spectrometer…

Determination of Trace Metal Impurities in Semiconductor Grade Phosphoric Acid by High Sensitivity Reaction Cell ICP-MS Application Semiconductor Author Introduction Junichi Takahashi Kouichi Youno Agilent Technologies 9-1 Takakura-Cho, Hachioji-Shi Tokyo, 192-0033 Japan Contamination control in semiconductor processing is increasingly important…

Application Note Semiconductor Automated Surface Analysis of Metal Contaminants in Silicon Wafers by Online VPD-ICP-MS/MS Agilent 8900 ICP-QQQ integrated with IAS Expert PS VPD provides the sensitivity and robustness required for 24/7 contamination control of wafers Authors Introduction Tatsu Ichinose…

Agilent Atomic Spectroscopy Solutions for the Semiconductor Industry > Search entire document Contents 2 Trace Elements in the Semiconductor Industry 3 Three Decades of ICP-MS Experience Drives Continuous Innovation 6 Agilent ICP-MS Solutions for the Semiconductor Industry 7 Setups for…