Aplikace z oblasti Polovodiče - strana 12
Otevřít dokument Basic Performance of the Agilent 7700s ICP-MS for the Analysis of Semiconductor Samples
Basic Performance of the Agilent 7700s ICP-MS for the Analysis of Semiconductor Samples
ICP/MS
Instrumentace
ICP/MS
Výrobce
Agilent Technologies
Zaměření
Polovodiče
Otevřít dokument Characterization of Amorphous and Microcrystalline Silicon using Raman Spectroscopy
Characterization of Amorphous and Microcrystalline Silicon using Raman Spectroscopy
RAMAN Spektrometrie, Mikroskopie
Instrumentace
RAMAN Spektrometrie, Mikroskopie
Výrobce
Thermo Fisher Scientific
Zaměření
Materiálová analýza, Polovodiče
Otevřít dokument Ultratrace Analysis of Solar (Photovoltaic) Grade Bulk Silicon by ICP-MS
Ultratrace Analysis of Solar (Photovoltaic) Grade Bulk Silicon by ICP-MS
ICP/MS
Instrumentace
ICP/MS
Výrobce
Agilent Technologies
Zaměření
Polovodiče
Otevřít dokument Analysis of Electroceramics by Laser Ablation ICP-MS
Analysis of Electroceramics by Laser Ablation ICP-MS
ICP/MS, Laserová ablace
Instrumentace
ICP/MS, Laserová ablace
Výrobce
Agilent Technologies
Zaměření
Polovodiče
Otevřít dokument Direct Analysis of Photoresist and Related Solvents Using the Agilent 7500cs ICP-MS
Direct Analysis of Photoresist and Related Solvents Using the Agilent 7500cs ICP-MS
ICP/MS
Instrumentace
ICP/MS
Výrobce
Agilent Technologies
Zaměření
Polovodiče
Otevřít dokument Determination of Trace Metal Impurities in Semiconductor Grade Phosphoric Acid by High Sensitivity Reaction Cell ICP-MS
Determination of Trace Metal Impurities in Semiconductor Grade Phosphoric Acid by High Sensitivity Reaction Cell ICP-MS
ICP/MS
Instrumentace
ICP/MS
Výrobce
Agilent Technologies
Zaměření
Polovodiče
Otevřít dokument Characterization of Trace Impurities in Silicon Wafers by High Sensitivity Reaction Cell ICP-MS
Characterization of Trace Impurities in Silicon Wafers by High Sensitivity Reaction Cell ICP-MS
ICP/MS
Instrumentace
ICP/MS
Výrobce
Agilent Technologies
Zaměření
Polovodiče
Otevřít dokument Characterization of Surface Metal Contamination on Silicon Wafers Using Surface Metal Extraction Inductively Coupled Plasma Mass Spectrometry (SME- ICP-MS)
Characterization of Surface Metal Contamination on Silicon Wafers Using Surface Metal Extraction Inductively Coupled Plasma Mass Spectrometry (SME- ICP-MS)
ICP/MS
Instrumentace
ICP/MS
Výrobce
Agilent Technologies
Zaměření
Polovodiče
